SavantIC Semiconductor Product Specification 2SB778 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SD998 APPLICATIONS ·High power amplifier applications ·Recommended for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -1.0 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB778 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V VBE Base-emitter on voltage IC=-5A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-1A ; VCE=-5V 10 MHz Collector output capacitance IE=0;f=1MHz;VCB=-10V 280 pF fT COB CONDITIONS hFE Classifications R O 55-110 80-160 2 MIN TYP. MAX -120 UNIT V 55 160 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB778 SavantIC Semiconductor Product Specification 2SB778 Silicon PNP Power Transistors 4