SavantIC Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz fT Transition frequency IC=-1A ; VCE=-5V VCEsat CONDITIONS hFE-1 Classifications R O 40-80 70-140 2 MIN TYP. MAX UNIT 140 280 pF 7 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB557