SAVANTIC 2SB828

SavantIC Semiconductor
Product Specification
2SB828
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1064
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·Relay drivers,high-speed inverters,
converters,and other general highcurrent switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-12
A
ICM
Collector current-peak
-17
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB828
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=<
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-6A ;IB=-0.3A
-0.5
V
ICBO
Collector cut-off current
VCB=-40V IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-5A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.2
µs
0.1
µs
0.4
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-5.0A; IB1=-IB2=-0.5A
RL=4C;VCC=-20V
Fall time
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB828
SavantIC Semiconductor
Product Specification
2SB828
Silicon PNP Power Transistors
4