SavantIC Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1134 ·Low collector saturation voltage APPLICATIONS ·Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 9 A PC Collector dissipation Ta=25 2 W TC=25 25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=9 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=3A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=3A ; VCE=2V 30 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 100 pF fT Transition frequency IC=1A ; VCE=5V 30 MHz 0.1 µs 1.4 µs 0.2 µs VCEsat CONDITIONS MIN TYP. MAX UNIT 280 Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;R=10C hFE-1 Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1667 SavantIC Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors 4