SAVANTIC 2SB834

SavantIC Semiconductor
Product Specification
2SB834
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SD880
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
-3
A
-0.5
A
IC
Collector current
IB
Base current
PC
Collector power dissipation
Ta=25
1.5
W
TC=25
30
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB834
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR) CEO
Collector-emitter breakdown voltage
IC=-50mA ; IB=0
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.7
-1.0
V
Collector-emitter saturation voltage
IC=-3A;IB=-0.3A
-0.5
-1.0
V
ICBO
Collector cut-off current
VCB=-60V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
60
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Cob
Collector output capacitance
IE=0; VCB=-10V; f=1MHz
Transition frequency
IC=-0.5A ; VCE=-5V
VBE
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
-60
UNIT
V
200
150
pF
9
MHz
0.4
µs
1.7
µs
0.5
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC=-30V; RL=15A
IB1=-IB2=-0.2A
hFE-1 classifications
O
Y
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SB834
SavantIC Semiconductor
Product Specification
2SB834
Silicon PNP Power Transistors
4