SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current-peak 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 160 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.5 V VBE Base-emitter on voltage IC=1A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=6A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 15 MHz Collector output capacitance f=1MHz;VCB=10V 210 pF 0.26 µs 6.88 µs 0.68 µs VCEsat fT COB CONDITIONS MIN TYP. MAX UNIT 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=20V ,RL=20B hFE-1 Classifications D E 60-120 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1047 SavantIC Semiconductor Product Specification 2SD1047 Silicon Power Transistors IB=0 4