SAVANTIC 2SD1047

SavantIC Semiconductor
Product Specification
2SD1047
Silicon NPN Power Transistors
DESCRIPTION
·Complement to type 2SB817
·With TO-3PN package
APPLICATIONS
·Power amplification
·Low frequency and audio band
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
12
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1047
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
140
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
2.5
V
VBE
Base-emitter on voltage
IC=1A;VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
hFE-2
DC current gain
IC=6A ; VCE=5V
20
Transition frequency
IC=1A ; VCE=5V
15
MHz
Collector output capacitance
f=1MHz;VCB=10V
210
pF
0.26
µs
6.88
µs
0.68
µs
VCEsat
fT
COB
CONDITIONS
MIN
TYP.
MAX
UNIT
200
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A; IB1=-IB2=0.1A
VCC=20V ,RL=20B
hFE-1 Classifications
D
E
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD1047
SavantIC Semiconductor
Product Specification
2SD1047
Silicon Power Transistors
IB=0
4