SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V -3 A -0.5 A IC Collector current IB Base current PC Collector power dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.7 V VBE Base-emitter voltage IC=-0.5A ;VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -100 µA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-0.5A; VCE=-5V 9 MHz Collector output capacitance f=1MHz ; VCB=-10V 150 pF 0.4 µs 1.7 µs 0.5 µs fT COB CONDITIONS MIN TYP. MAX -60 UNIT V 200 Switching times ton Trun-on time ts Storage time tf Fall time RL=15B;VCC=-30V IB1=-IB2=-0.2A Duty cycleC1% hFE-1 Classifications O Y 60-120 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SB1015 SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors 4