SavantIC Semiconductor Product Specification 2SB993 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A ICM Collector current-peak -10 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB993 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=8 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -7 V Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.4 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 240 10 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SB993