SAVANTIC 2SA1021

SavantIC Semiconductor
Product Specification
2SA1021
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large current capacity
APPLICATIONS
·For color TV sound output;converters
Inverters applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1.5
A
ICM
Collector current-Peak
-2.5
A
PC
Collector power dissipation
Ta=25
1.0
TC=25
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1021
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; RBE=8
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10µA; IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10µA ; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.2
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
µA
hFE
DC current gain
IC=-150mA ; VCE=-5V
60
Transition frequency
IC=-50mA ; VCE=-10V
15
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
320
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA1021