SavantIC Semiconductor Product Specification 2SC1113 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High current capacity ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V 6 A 40 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1113 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICEO Collector cut-off current VCE=120V; IB=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=5A ; VCE=4V 30 Transition frequency IC=0.5A ; VCE=12V 10 fT CONDITIONS 2 MIN TYP. MAX UNIT 100 V 5 V MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1113