Inchange Semiconductor Product Specification 2SC1114 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 325 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 4 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1114 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 325 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=325V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V 20 Transition frequency IC=0.5A ; VCE=12V 10 fT CONDITIONS 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC1114 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3