SAVANTIC 2SC1163

SavantIC Semiconductor
Product Specification
2SC1163
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High power dissipation
APPLICATIONS
·Useful for high-voltage general purpose
applications
·Suitable for transformerless ,line-operated
equipment
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25? )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
4
V
0.1
A
20.8
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-65~150
?
VALUE
UNIT
6.25
? /W
TC=25?
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
SavantIC Semiconductor
Product Specification
2SC1163
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1.0mA;IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100µA;IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA;IC=0
4
V
VCEsat
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=50mA ;IB=5mA
1.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
10
µA
hFE
DC current gain
IC=50mA ; VCE=10V
2
MIN
30
TYP.
MAX
240
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1163