SAVANTIC BU902

SavantIC Semiconductor
Product Specification
BU902
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For color TV horizontal deflection circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
480
V
VEBO
Emitter-base voltage
Open collector
7
V
8
A
IC
Collector current
ICM
Collector current-peak
tp<5ms
15
A
PT
Total power dissipation
TC=25
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
BU902
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0;
480
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A;IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=1100V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=4A ; VCE=5V
5.5
2
MIN
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BU902