SavantIC Semiconductor Product Specification BU903 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For color TV horizontal deflection circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1350 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V 6 A 125 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BU903 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 550 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=3.2A;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage IC=3.2A;IB=0.8A 1.3 V ICBO Collector cut-off current VCB=1300V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE DC current gain IC=1.5A ; VCE=5V 2 MIN 8 TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU903