SAVANTIC 2SC1449

SavantIC Semiconductor
Product Specification
2SC1449
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplification
·High frequency amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
40
V
VCEO
Collector-emitter voltage
Open base
35
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
2
A
IB
Base current
1
A
PC
Collector power dissipation
Ta=25
1.0
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC1449
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=100µA;IE=0
40
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
35
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=500mA ;IB=50m A
0.7
V
VBEsat
Base-emitter saturation voltage
IC=500mA ;IB=50m A
1.5
V
hFE
DC current gain
IC=300mA ; VCE=2V
ICBO
Collector cut-off current
VCB=35V; IE=0
0.5
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.5
µA
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
20
pF
fT
Transition frequency
IC=100mA ; VCE=5V
55
MHz
2
40
250
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC1449