SavantIC Semiconductor Product Specification 2SB1007 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -0.7 A PD Total power dissipation Ta=25 1.2 W TC=25 10 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1007 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50µA ;IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 -5 V Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA ICBO Collector cut-off current IEBO VCEsat CONDITIONS MIN TYP. UNIT -0.4 V VCB=-50V; IE=0 -0.5 µA Emitter cut-off current VEB=-4V; IC=0 -0.5 µA hFE DC current gain IC=-0.1A ; VCE=-3V COB Output capacitance IE=0; VCB=-10V;f=1MHz 14 fT Transition frequency IE=50mA ; VCE=-10V 100 hFE Classifications P Q R 82-180 120-270 180-390 2 -0.2 MAX 82 390 20 pF MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1007