SavantIC Semiconductor Product Specification 2SC1904 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 50mA A PD Total power dissipation 1 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1904 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=9 150 V V(BR)CBO Collector-base breakdown voltage IC=10µA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA 0.5 V VBEsat Base-emitter saturation voltage IC=10mA ;IB=1mA 1.0 V ICBO Collector cut-off current VCB=140V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE DC current gain IC=10mA ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 3 pF fT Transition frequency IC=10mA ; VCE=5V 70 MHz 2 MIN TYP. 35 MAX UNIT 500 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1904