SAVANTIC 2SC1777

SavantIC Semiconductor
Product Specification
2SC1777
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
70
V
VEBO
Emitter-base voltage
Open collector
6
V
6
A
50
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
175
Tstg
Storage temperature
-55~175
TC=25
SavantIC Semiconductor
Product Specification
2SC1777
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA ;IB=0
70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VBE sat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=70V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
30
MAX
UNIT
150
10
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2SC1777