Inchange Semiconductor Product Specification 2SC1431 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V 2 A 23 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1431 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0 110 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBE sat Base-emitter saturation voltage IC=1A; IB=0.1A 1.2 V ICBO Collector cut-off current VCB=110V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.4A ; VCE=2V 50 Transition frequency IC=0.4A ; VCE=10V 30 fT CONDITIONS 2 MIN TYP. MAX UNIT 240 MHz Inchange Semiconductor Product Specification 2SC1431 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3