SavantIC Semiconductor Product Specification 2SA1041 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V -15 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 175 Tstg Storage temperature -55~200 TC=25 SavantIC Semiconductor Product Specification 2SA1041 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -1.5 V VBEsat Base-emitter saturation voltage IC=-7A; IB=-0.7A -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -50 µA hFE DC current gain IC=-1.5A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 350 pF fT Transition frequency IC=-1A ; VCE=-10V 60 MHz 2 MIN TYP. 35 MAX UNIT 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SA1041