SavantIC Semiconductor Product Specification 2SC2078 Silicon NPN Power Transistors DESCRIPTION With TO-220 package ·Low collector saturation voltage ·Wit APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 75 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 5 A PC Collector power dissipation Ta=25 1.2 W TC=25 10 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2078 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1 A 0.15 0.6 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1 A 0.9 1.2 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA;RBE=150< 75 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA; IC=0 5 V ICBO Collector cut-off current VCB=40V;IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 10 µA hFE DC current gain IC=0.5A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.1A ; VCE=10V hFE Classifications B C D E 25-50 40-80 60-120 100-200 2 25 200 45 100 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2078