SAVANTIC 2SC2344

SavantIC Semiconductor
Product Specification
2SC2344
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1011
APPLICATIONS
·High voltage switching
·Audio frequency power amplifier;
·100W output predriver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
1.5
A
ICM
Collector current-Peak
3.0
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2344
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Base-emitter breakdown voltage
IC=10mA ,RBE=:
160
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
0.3
V
VBE
Base-emitter voltage
IC=10mA ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
µA
hFE
DC current gain
IC=0.3A ; VCE=5V
fT
Transition frequency
IC=50mA ; VCE=10V
100
MHz
Cob
Output capacitance
f=1MHz ; VCB=10V
23
pF
0.15
µs
0.81
µs
0.48
µs
VCEsat
60
200
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A IB1=- IB2=50mA
hFE Classifications
D
E
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC2344
SavantIC Semiconductor
Product Specification
2SC2344
Silicon NPN Power Transistors
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
5
2SC2344