ISC 2SC3505

Inchange Semiconductor
Product Specification
2SC3505
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage ,high reliability
・High speed switching
APPLICATIONS
・Switching regulators
・Ultrasonic generators
・High frequency inverters
・General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
6
A
IB
Base current
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SC3505
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
700
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=900V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
1.0
μs
5.0
μs
1.0
μs
10
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3A;IB1=0.6A;IB2=-1.2A
RL=100Ω,PW=20μs
Duty≤2%
Fall time
2
Inchange Semiconductor
Product Specification
2SC3505
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3