Inchange Semiconductor Product Specification 2SC2626 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.55 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC2626 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V VCEO(SUS) Collector-emitter sustaining voltage IC=1A ;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.2 V VBEsat Emitter-base saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=6A ; VCE=5V 0.8 μs 2.0 μs 0.8 μs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=10A IB1=-IB2=2A RL=20Ω,Pw=20μs Duty≤2% 2 Inchange Semiconductor Product Specification 2SC2626 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC2626 Silicon NPN Power Transistors 4