SavantIC Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SA1141 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 115 V VCEO Collector-emitter voltage Open base 115 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25 100 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS TYP. MAX UNIT IC=4.5A ;IB=0.45A 0.6 1.5 V Base-emitter on voltage IC=4.5A ; VCE=2V 1.2 2.0 V ICBO Collector cut-off current VCB=80V; IE=0 50 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE -1 DC current gain IC=1A ; VCE=2V 60 hFE -2 DC current gain IC=4.5A ; VCE=2V 40 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF fT Transition frequency IC=1A ; VCE=2V 80 MHz hFE-1 classifications R Q 60-120 100-200 2 MIN 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SC2681