SAVANTIC 2SC2681

SavantIC Semiconductor
Product Specification
2SC2681
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SA1141
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
115
V
VCEO
Collector-emitter voltage
Open base
115
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
TC=25
100
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC2681
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
CONDITIONS
TYP.
MAX
UNIT
IC=4.5A ;IB=0.45A
0.6
1.5
V
Base-emitter on voltage
IC=4.5A ; VCE=2V
1.2
2.0
V
ICBO
Collector cut-off current
VCB=80V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE -1
DC current gain
IC=1A ; VCE=2V
60
hFE -2
DC current gain
IC=4.5A ; VCE=2V
40
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
230
pF
fT
Transition frequency
IC=1A ; VCE=2V
80
MHz
hFE-1 classifications
R
Q
60-120
100-200
2
MIN
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SC2681