SavantIC Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1142 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V 0.1 A IC Collector current PC Collector power dissipation Ta=25 1.2 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS TYP. MAX UNIT IC=50mA; IB=5mA 0.12 0.5 V Base-emitter saturation voltage IC=50mA; IB=5mA 0.8 1.5 V ICBO Collector cut-off current VCB=180V; IE=0 1 µA IEBO Emitter cut-off current VEB=3V; IC=0 1 µA hFE-1 DC current gain IC=1mA ; VCE=5V 90 190 hFE-2 DC current gain IC=10mA ; VCE=5V 100 200 fT Transition frequency IC=20mA ; VCE=10V 200 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 3.2 pF hFE-2 Classifications Q P 100-200 160-320 2 MIN 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2682