SAVANTIC 2SA1006B

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
·
·With TO-220 package
·Complement to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SA1006
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SA1006A
Open emitter
Emitter-base voltage
-200
2SA1006B
-250
2SA1006
-180
2SA1006A
UNIT
-180
Open base
2SA1006B
VEBO
VALUE
-200
V
V
-250
Open collector
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-Peak
-3.0
A
PT
Total power dissipation
Ta=25
1.5
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
CONDITIONS
MAX
UNIT
IC=-0.5A; IB=-50mA
-1.0
V
Base-emitter saturation voltage
IC=-0.5A ;IB=-50mA
-1.5
V
ICBO
Collector cut-off current
VCB=-150V ;IE=0
-1
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1
µA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
30
hFE-2
DC current gain
IC=-150mA ; VCE=-5V
60
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
45
pF
fT
Transition frequency
IC=-100mA ; VCE=10V
80
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
MIN
TYP.
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1006 2SA1006A 2SA1006B
4
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
5
2SA1006 2SA1006A 2SA1006B