SAVANTIC 2SC2752

SavantIC Semiconductor
Product Specification
2SC2752
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·Low power switching regulator
·DC-DC converter
·High voltage switch
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
0.5
A
ICM
Collector current-peak
1.0
A
IB
Base current
0.25
A
PC
Collector power dissipation
Ta=25
1.0
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC2752
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.3A; IB1=0.06A,L=10mH
VCEsat
Collector-emitter saturation voltage
IC=300mA; IB=60mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=300mA; IB=60mA
1.2
V
ICEX
Collector cut-off current
VCE=400V; VBE=-1.5V
TC=125
0.01
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=50mA ; VCE=5V
20
hFE -2
DC current gain
IC=300mA ; VCE=5V
10
400
UNIT
V
80
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=300mA; IB1=-IB2=60mA
PW?50µs;VCC?150V
RL=500A
Fall time
hFE-1 Classifications
M
L
K
20-40
30-60
40-80
2
1.0
µs
2.5
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2752