SAVANTIC 2SC3210

SavantIC Semiconductor
Product Specification
2SC3210
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High breakdown voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PC
Collector power dissipation
TC=25
100
Ta=25
3
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3210
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
11
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=5A; VCC=100V
IB1=-IB2=1A
Fall time
2
1.0
µs
2.5
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SC3210