SavantIC Semiconductor Product Specification 2SC3210 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation TC=25 100 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3210 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 400 UNIT V 11 MHz Switching times ton Turn-on time tstg Storage time tf IC=5A; VCC=100V IB1=-IB2=1A Fall time 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SC3210