SAVANTIC 2SB1069

SavantIC Semiconductor
Product Specification
2SB1069 2SB1069A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB1069
VCBO
Collector-base voltage
-20
Open base
2SB1069A
VEBO
Emitter-base voltage
V
-50
2SB1069
Collector-emitter voltage
UNIT
-40
Open emitter
2SB1069A
VCEO
VALUE
V
-40
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
Ta=25
1.4
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1069 2SB1069A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SB1069
MIN
TYP.
MAX
UNIT
-20
IC=-10mA ,IB=0
2SB1069A
V
-40
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-1A ; VCE=-2V
60
Transition frequency
IC=-0.5A ; VCE=-5V
fT
260
150
MHz
0.3
µs
0.4
µs
0.1
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-2A; IB1=-IB2=-0.2A
Fall time
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1069 2SB1069A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3