SavantIC Semiconductor Product Specification 2SC2751 Silicon NPN Power Transistors DESCRIPTION ·With TO-3N package ·High voltage ,high speed · APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 7.5 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2751 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=10A ;IB=2A; L=50µH VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 µA ICEX Collector cut-off current VCE=400V; VBE(off)=-1.5V Ta=125 100 1.0 µA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=2A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 10 hFE-3 DC current gain IC=10A ; VCE=5V 7 400 UNIT V 80 Switching times ton Turn-on time ts Storage time tf Fall time IC=10A;IB1=-IB2=2A RL=15@; VCCA150V hFE-1 Classifications N R O Y 15-30 20-40 30-60 40-80 2 1.0 µs 2.5 µs 0.7 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SC2751