SAVANTIC 2SC2920

SavantIC Semiconductor
Product Specification
2SC2920
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
15
A
150
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2920
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=7
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=10A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=450V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE
DC current gain
IC=10A ; VCE=2V
Transition frequency
IC=2A ; VCE=10V
30
MHz
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
240
pF
fT
COB
CONDITIONS
2
MIN
TYP.
10
MAX
UNIT
30
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC2920