Inchange Semiconductor Product Specification 2SC3043 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 12 A 25 A 4 A 120 W IC Collector current ICP Collector current-pulse IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ PW≤300μs,Duty cycle≤10% TC=25℃ Inchange Semiconductor Product Specification 2SC3043 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=8A; IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.6A ; VCE=5V 15 hFE-2 DC current gain IC=8A ; VCE=5V 8 fT Transition frequency IC=1.6A ; VCE=10V 20 MHz Cob Output capacitance IE=0; VCB=10V,f=1MHz 160 pF 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC3043 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3