SavantIC Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A PD Total power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBE(sat) Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS MIN MAX 400 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=5A ; VCE=2V 10 hFE-2 DC current gain IC=1mA ; VCE=2V 5 Transition frequency IC=1A ; VCE=10V fT TYP. 2 50 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2939