Inchange Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors · DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS MIN MAX 400 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=4A ; VCE=2V 10 hFE-2 DC current gain IC=1mA ; VCE=2V 5 Transition frequency IC=0.8A ; VCE=10V fT TYP. 2 50 20 MHz Inchange Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3