SavantIC Semiconductor Product Specification 2SC3231 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Wide area of safe operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ·TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 4 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3231 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V ICBO Collector cut-off current VCB=200V;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V VCEsat fT CONDITIONS 2 MIN TYP. 30 MAX UNIT 150 8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3231