SavantIC Semiconductor Product Specification 2SB812 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -4 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SB812 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-60V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-4V VCEsat CONDITIONS 2 MIN 40 TYP. MAX 250 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB812