ISC 2SC2810

Inchange Semiconductor
Product Specification
2SC2810
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage,High speed
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
PC
Collector dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2810
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.3
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
10
μA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
10
18
MHz
Inchange Semiconductor
Product Specification
2SC2810
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3