SavantIC Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage highspeed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 1 A ICM Collector current-Peak 2 A IB Base current 0.3 A PC Collector power dissipation TC=25 30 Ta=25 2 w Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.2A ;IB=0.04A 1.5 V VBEsat Base-emitter saturation voltage IC=0.2A; IB=0.04A 1.0 V ICBO Collector cut-off current VCB=900V; IE=0 50 µA IEBO Emitter cut-off current VEB=7V; IC=0 50 µA hFE-1 DC current gain IC=0.05A ; VCE=5V 6 hFE-2 DC current gain IC=0.5A ; VCE=5V 3 Transition frequency IC=0.05A; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 800 UNIT V 4 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V 2 1.0 µs 3.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC4004