Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 6 A 20 A 3 A 120 W IC Collector current ICP Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ PW≤300μs, Duty Cycle≤10% TC=25℃ Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 2.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 10 hFE-2 DC current gain IC=2A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V, f=1MHz 120 pF fT Transition frequency IC=0.4A ; VCE=10V 15 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=400V ,RL=100Ω 2 1.0 μs 2.5 μs 0.7 μs Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3