ISC 2SC4518A

Inchange Semiconductor
Product Specification
2SC4518 2SC4518A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High voltage switching transistor
APPLICATIONS
・For switching regulator ;lighting inverter
and general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC4518
VCBO
Collector-base voltage
VALUE
UNIT
900
Open emitter
2SC4518A
V
1000
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
550
V
7
V
IC
Collector current
5
A
ICM
Collector current-pulse
10
A
IB
Base current
2.5
A
PC
Collector power dissipation
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4518 2SC4518A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.8A; IB=0.36A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=1.8A; IB=0.36A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=1.8A ; VCE=4V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
50
pF
fT
Transition frequency
IE=-0.35A ; VCE=12V
6
MHz
550
UNIT
V
10
25
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.8A; IB1=0.27A
IB2=-0.9A
VCC=250V ,RL=139Ω
2
0.7
μs
4.0
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC4518 2SC4518A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC4518 2SC4518A
Silicon NPN Power Transistors
4