SavantIC Semiconductor Product Specification 2SC4596 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For high speed power switching and DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25 25 Ta=25 1 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4596 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=3A, IB=0.15A 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=4A, IB=0.2A 0.5 V VBEsat-1 Base-emitter saturation voltage IC=3A, IB=0.15A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=4A, IB=0.2A 1.5 V ICBO Collector cut-off current VCB=100V, IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=2V Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 80 pF fT Transition frequency IC=0.5A ; VCE=10V 120 MHz 60 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ; RL=10@ IB1= IB2=0.15A VCCA30V hFE Classifications D E F 60-120 100-200 160-320 2 0.3 µs 1.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC4596