SavantIC Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching ·High collector current ·Complement to type 2SB953/953A APPLICATIONS ·Power amplifiers ·Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1444 VCBO Collector-base voltage 20 Open base 2SD1444A VEBO Emitter-base voltage IC V 50 2SD1444 Collector-emitter voltage UNIT 40 Open emitter 2SD1444A VCEO VALUE V 40 Open collector 5 V Collector current (DC) 7 A ICM Collector current-peak 12 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1444 MIN TYP. MAX UNIT 20 IC=10mA , IB=0 V 40 2SD1444A VCEsat Collector-emitter saturation voltage IC=5A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.16A 1.5 V 50 µA 50 µA ICBO Collector cut-off current 2SD1444 VCB=40V; IE=0 2SD1444A VCB=50V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=2A ; VCE=2V 60 fT Transition frequency IC=0.5A ; VCE=10V 150 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 110 pF 0.3 µs 0.3 µs 0.1 µs 260 Switching times ton Turn-on time tstg Storage time tf IC=2A; IB1=-IB2=66mA Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3