SavantIC Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 3 A ICM Collector current-peak 6 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3 A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3 A 1.5 V ICBO Collector cut-off current VCB=600V; IE=0 10 µA ICES Collector cut-off current VCE=1200V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 30 hFE-2 DC current gain IC=1.0A ; VCE=5V 10 600 UNIT V 50 Switching times ts Storage time 2.5 µs 0.15 µs IC=1.5A;IB1=0.3A ;IB2=-0.6A tf Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC5417 SavantIC Semiconductor Product Specification 2SC5417 Silicon NPN Power Transistors 4