SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -8 V IC Collector current -3 A ICM Collector current-peak -5 A IB Base current -0.3 A PC Collector dissipation TC=25 20 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-1.5mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1.5A ; IB=-1.5mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 µA IEBO Emitter cut-off current VEB=-8V;IC=0 -4.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-2A ; VCE=-2V 2000 -100 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=-1.5mA VCC?-30V ,RL=20A 2 0.5 µs 1.0 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1495