SavantIC Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·DC-DC converter applications ·Inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 1 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V VBEsat Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 10 µA hFE-1 DC current gain IC=1mA ; VCE=5V 10 hFE-2 DC current gain IC=1A ; VCE=5V 14 34 Switching times ton Turn-on time ts Storage time tf Fall time 0.2 IB1=0.64A ;IB2=1.28A VCC>200V;RL=62.5@ 2.0 0.15 2 µs 3.5 µs µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC5439 SavantIC Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors 4