SAVANTIC 2SC2899

SavantIC Semiconductor
Product Specification
2SC2899
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High voltage,high speed
APPLICATIONS
·For high speed and high voltage
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
0.5
A
ICM
Collector current-peak
1.0
A
PC
Ta=25
0.75
TC=25
10
W
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC2899
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; RBE=:,L=100mH
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=250mA; IB=50m A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=250mA ;IB=50m A
1.5
V
hFE-1
DC current gain
IC=250mA ; VCE=5V
15
hFE-2
DC current gain
IC=500mA ; VCE=5V
7
ICBO
Collector cut-off current
VCB=400V; IE=0
20
µA
ICEO
Collector cut-off current
VCE=350V; RBE=:
50
µA
1.0
µs
2.0
µs
1.0
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=0.5A; IB1=-IB2=0.1A
VCC?150V
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC2899
SavantIC Semiconductor
Product Specification
2SC2899
Silicon NPN Power Transistors
4