SavantIC Semiconductor Product Specification 2SB980 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Large current capability APPLICATIONS ·For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -6 A ICM Collector current-peak -10 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB980 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=; -120 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V IE=0 -50 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 VCEsat CONDITIONS 2 MIN TYP. MAX 200 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB980