SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION ·With TO-220Fa package ·High VCBO ·High speed switching APPLICATIONS ·Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1274 VCBO Collector-base voltage 2SD1274A VALUE UNIT 150 Open emitter 200 V 250 2SD1274B VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA, IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=1A 1.6 V Base-emitter voltage IC=5A ; VCE=4V 1.5 V 1 mA 50 µA VCEsat VBE ICBO Collector cut-off current CONDITIONS 2SD1274 VCB=150V; IE=0 2SD1274A VCB=200V; IE=0 2SD1274B VCB=250V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=10V tf Fall time IC=5A ;IB1=0.8A VEB=-5V 2 MIN TYP. MAX UNIT 14 40 MHz 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3