Inchange Semiconductor Product Specification 2SD1274 2SD1274A 2SD1274B Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High VCBO ・High speed switching APPLICATIONS ・Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL PARAMETER CONDITIONS C I M E S E NG 2SD1274 OND R O T UC VALUE UNIT 150 VCEO A H C IN Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A PC Collector power dissipation VCBO Collector-base voltage 2SD1274A Open emitter 2SD1274B 200 V 250 TC=25℃ 40 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA, IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=1A 1.6 V Base-emitter voltage IC=5A ; VCE=4V 1.5 V 1 mA VCEsat VBE ICBO IEBO hFE fT tf Collector cut-off current CONDITIONS 2SD1274 VCB=150V; IE=0 2SD1274A VCB=200V; IE=0 2SD1274B VCB=250V; IE=0 Emitter cut-off current 体 导 半 VEB=5V; IC=0 固电 DC current gain Transition frequency IN IC=0.5A ; VCE=10V IC=5A ;IB1=0.8A VEB=-5V 2 TYP. MAX TOR C U D ON C I M E SE G N A CH Fall time IC=5A ; VCE=4V MIN 14 50 40 UNIT μA MHz 1.0 μs Inchange Semiconductor Product Specification 2SD1274 2SD1274A 2SD1274B Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3